MRF284S 30 w, 2000 mhz, 26 v lateral n-channel broadband rf power mosfets case360b-01, (mrf284, case 360c-03, (MRF284S) rating drain-source voltage gate-source voltage total device dissipation @ tc = 25c derate above 25c storage temperature range operating junction temperature symbol vdss vgs pd tstg tj value 65 20 87.5 0.5 -65 to +150 200 unit vdc vdc watts w/"c c c thermal characteristics characteristic thermal resistance, junction to case electrical characteristics nj sem.-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semiconductors assumes no responsibility for any errors or omissions discovered in its *e ni semi-t umluclor* encourages customers ti> verify that datasheets nre current before placing orders.
, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol mln typ max unit on characteristics gate threshold voltage (vds = 10 vdc, id = 150 nadc) gate quiescent voltage (vds = 26 vdc, id = 200 madc) drain-source on-voltage (vqs = 10vdc, (d = 1.0adc) forward transconductance ( vds = 10 vdc, lo = 1-oadc) vgs(th) vgs(q) vds(?1) qfe 2.0 3.0 ? 1.0 3.0 4.0 0.3 1.5 4.0 5.0 0.6 ? vdc vdc vdc s dynamic characteristics input capacitance (vrjs = 26 vdc, vgs = 0, f = 1 .0 mhz) output capacitance (vds = 26 vdc, vqs = 0, f = 1 .0 mhz) reverse transfer capacitance (vds = 26 vdc, vqs = 0, f = 1 .0 mhz) ciss cqss crss ? ? ~- 37 23 1.2 ? ? ? pf pf pf functional tests (in motorola test fixture) common-source power gain |
